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IRFIZ44NPBF

  • In Stock: 117400
  • Available: 51954

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.55449US $0.55
10+US $0.36966US $3.70
30+US $0.27724US $8.32
100+US $0.22180US $22.18
500+US $0.20331US $101.66
1000+US $0.18483US $184.83

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRFIZ44NPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.826mm
  • Height
    9.8mm
  • Length
    10.6172mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2003
  • Rise Time
    69ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    4 V
  • Part Status
    Active
  • Termination
    Through Hole
  • REACH Status
    REACH Unaffected
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Recovery Time
    98 ns
  • Current Rating
    30A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-220-3 Full Pack
  • Case Connection
    ISOLATED
  • Fall Time (Typ)
    60 ns
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Factory Lead Time
    12 Weeks
  • Isolation Voltage
    2.5kV
  • Power Dissipation
    38W
  • Threshold Voltage
    4V
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY
  • Number of Elements
    1
  • Turn On Delay Time
    7.3 ns
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Voltage - Rated DC
    60V
  • Dual Supply Voltage
    55V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    47 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    45W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    24m Ω @ 17A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    65nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    31A
  • Drain-source On Resistance-Max
    0.024Ohm
  • Drain to Source Breakdown Voltage
    55V
  • Input Capacitance (Ciss) (Max) @ Vds
    1300pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    31A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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