IRFP264PBF
- Manufacturer's Part No.:IRFP264PBF
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- Description:MOSFET N-CH 250V 38A TO-247AC
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- In Stock: 22000
- Available: 17545
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.81190 | US $2.81 |
10+ | US $1.87460 | US $18.75 |
30+ | US $1.40595 | US $42.18 |
100+ | US $1.12476 | US $112.48 |
500+ | US $1.03103 | US $515.52 |
1000+ | US $0.93730 | US $937.30 |
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The IRFP264PBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. It is designed for use in a variety of applications, including power management, motor control, and switching power supplies. Here’s a detailed description of its key features and specifications:
Physical Characteristics:
- Package Type: The IRFP264PBF is typically housed in a TO-220 package, which is a standard package for power devices. This package allows for efficient heat dissipation and is suitable for mounting on heatsinks.
- Dimensions: The TO-220 package has a rectangular shape with three leads extending from one side. The leads are designed for easy soldering onto a PCB (Printed Circuit Board).
Electrical Specifications:
- Voltage Rating: The IRFP264PBF has a maximum drain-source voltage (V_DS) of 55V, making it suitable for applications that require moderate voltage handling.
- Current Rating: It can handle a continuous drain current (I_D) of up to 50A at a specified temperature, which allows it to drive high loads effectively.
- R_DS(on): The on-resistance (R_DS(on)) is typically around 0.08 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved efficiency during operation.
Thermal Characteristics:
- Junction-to-Case Thermal Resistance (RθJC): The thermal resistance from the junction to the case is low, allowing for effective heat dissipation. This is crucial for maintaining performance and reliability under high load conditions.
- Maximum Junction Temperature: The device can operate at a maximum junction temperature of 175°C, which provides a good margin for thermal management in demanding applications.
Gate Characteristics:
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2V to 4V, indicating the minimum gate voltage required to turn the MOSFET on. This feature allows for compatibility with low-voltage control signals.
- Gate Charge (Q_g): The total gate charge is relatively low, which means that the device can switch on and off quickly, making it suitable for high-frequency applications.
Applications:
The IRFP264PBF is widely used in various applications, including:
- Power Supplies: It is often used in switch-mode power supplies (SMPS) for efficient power conversion.
- Motor Drives: The MOSFET is suitable for driving DC motors and other inductive loads due to its high current handling capability.
- Class D Amplifiers: It can be utilized in audio amplifiers for efficient signal amplification.
Compliance and Environmental:
- RoHS Compliant: The IRFP264PBF is RoHS compliant, meaning it is free from hazardous substances and meets environmental regulations.
Summary:
In summary, the IRFP264PBF from Vishay is a robust and efficient N-channel MOSFET that offers high current and voltage handling capabilities, low on-resistance, and fast switching speeds. Its design and specifications make it an excellent choice for a wide range of power electronics applications, ensuring reliability and performance in demanding environments.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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