IRFP4668PBF

The IRFP4668PBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This device is designed for high-efficiency power applications, making it suitable for a variety of uses in power management, motor control, and other electronic circuits.

Key Features:

1. Voltage Rating: The IRFP4668PBF has a maximum drain-source voltage (V_DS) of 55V, which allows it to handle significant voltage levels in various applications.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 70A at a specified temperature, making it capable of driving high loads efficiently.

3. R_DS(on): The on-resistance (R_DS(on)) is exceptionally low, typically around 0.025 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved thermal performance.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy interfacing with low-voltage control signals.

5. Package Type: The IRFP4668PBF is housed in a TO-220 package, which provides good thermal dissipation characteristics. This package is designed for easy mounting on heatsinks, facilitating effective heat management in high-power applications.

6. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, which helps in maintaining the device's performance under high load conditions.

7. Switching Speed: The device features fast switching capabilities, making it suitable for high-frequency applications. This is particularly beneficial in applications such as DC-DC converters and inverters.

8. Applications: The IRFP4668PBF is widely used in various applications, including:

   • Power supplies
   • Motor drivers
   • Class D audio amplifiers
   • Solar inverters
   • Electric vehicles

9. RoHS Compliance: The part is RoHS compliant, indicating that it meets environmental regulations regarding hazardous substances.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Pulsed Drain Current (I_D, pulsed): 120A
• Total Gate Charge (Q_g): Approximately 100 nC at V_GS = 10V, which influences the drive requirements for the gate.

Conclusion:

The IRFP4668PBF from Infineon Technologies is a robust and efficient N-channel MOSFET that excels in high-power applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a preferred choice for engineers looking to design reliable and efficient power electronic systems.