IRFPG50PBF

The IRFPG50PBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. It is designed for a variety of applications, including power management, switching, and amplification in electronic circuits. Here’s a detailed description of its key features and specifications:

Key Features:

1. Type: N-channel MOSFET

   • The N-channel configuration allows for efficient switching and is commonly used in high-side and low-side switching applications.

2. Voltage Rating:

   • The IRFPG50PBF has a maximum drain-source voltage (V_DS) of 50V, making it suitable for applications that require moderate voltage handling.

3. Current Rating:

   • It can handle a continuous drain current (I_D) of up to 50A, which is beneficial for high-current applications.

4. R_DS(on):

   • The on-resistance (R_DS(on)) is typically low, around 0.08 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation and enhances efficiency.

5. Gate Threshold Voltage (V_GS(th)):

   • The gate threshold voltage is in the range of 2V to 4V, which indicates the voltage required to turn the MOSFET on. This feature allows for compatibility with various control voltages.

6. Package Type:

   • The IRFPG50PBF is available in a TO-220 package, which provides good thermal performance and is easy to mount on heatsinks for effective heat dissipation.

7. Thermal Resistance:

   • The thermal resistance from junction to case (RθJC) is low, allowing for efficient heat transfer and enabling the device to operate at higher power levels without overheating.

8. Fast Switching Speed:

   • The device is designed for fast switching applications, making it suitable for use in PWM (Pulse Width Modulation) circuits and other high-frequency applications.

9. Applications:

   • Common applications include power supplies, motor drivers, DC-DC converters, and other power management systems.

10. RoHS Compliant:

    • The IRFPG50PBF is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it is free from certain hazardous materials.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Pulsed Drain Current (I_D, pulsed): 160A
• Maximum Power Dissipation (P_D): 94W (at 25°C)
• Operating Temperature Range: -55°C to +175°C

Conclusion:

The IRFPG50PBF from Vishay is a robust and versatile N-channel MOSFET that offers excellent performance for a wide range of electronic applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it an ideal choice for engineers looking to design efficient and reliable power management solutions.