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IRFR024NTRPBF
- Manufacturer's Part No.:IRFR024NTRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 55V 17A DPAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 80000
- Available: 246548
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.36300 | US $0.36 |
10+ | US $0.24200 | US $2.42 |
30+ | US $0.18150 | US $5.45 |
100+ | US $0.14520 | US $14.52 |
500+ | US $0.13310 | US $66.55 |
1000+ | US $0.12100 | US $121.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFR024NTRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width6.22mm
- Height2.52mm
- Length6.7056mm
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published2004
- Rise Time34ns
- Vgs (Max)±20V
- Resistance75mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Recovery Time83 ns
- Terminal FormGULL WING
- Current Rating17A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)27 ns
- Factory Lead Time12 Weeks
- Power Dissipation38W
- Threshold Voltage4V
- Additional FeatureAVALANCHE RATED, ULTRA LOW RESISTANCE
- Number of Channels1
- Number of Elements1
- Turn On Delay Time4.9 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC55V
- Dual Supply Voltage55V
- Radiation HardeningNo
- Turn-Off Delay Time19 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max45W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs75m Ω @ 10A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)17A
- Max Junction Temperature (Tj)175°C
- Pulsed Drain Current-Max (IDM)68A
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds370pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C17A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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