IRFR1010ZTRLPBF
- Manufacturer's Part No.:IRFR1010ZTRLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 55V 42A DPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 520000
- Available: 155231
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $37.97200 | US $37.97 |
10+ | US $28.47900 | US $284.79 |
30+ | US $24.68180 | US $740.45 |
100+ | US $21.83390 | US $2183.39 |
500+ | US $20.50488 | US $10252.44 |
1000+ | US $18.98600 | US $18986.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFR1010ZTRLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width6.22mm
- Height2.3876mm
- Length6.7056mm
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Published2010
- Rise Time76ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Fall Time (Typ)48 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation140W
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time17 ns
- Vgs(th) (Max) @ Id4V @ 100μA
- Radiation HardeningNo
- Turn-Off Delay Time42 ns
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max140W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs7.5m Ω @ 42A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)220 mJ
- Continuous Drain Current (ID)42A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.0075Ohm
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds2840pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C42A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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