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IRFR1010ZTRLPBF

  • In Stock: 520000
  • Available: 155231

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $37.97200US $37.97
10+US $28.47900US $284.79
30+US $24.68180US $740.45
100+US $21.83390US $2183.39
500+US $20.50488US $10252.44
1000+US $18.98600US $18986.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRFR1010ZTRLPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6.22mm
  • Height
    2.3876mm
  • Length
    6.7056mm
  • FET Type
    N-Channel
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • Rise Time
    76ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-252AA
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    48 ns
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    140W
  • Terminal Position
    SINGLE
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
  • Number of Elements
    1
  • Turn On Delay Time
    17 ns
  • Vgs(th) (Max) @ Id
    4V @ 100μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    42 ns
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    140W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    7.5m Ω @ 42A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    95nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    220 mJ
  • Continuous Drain Current (ID)
    42A
  • Peak Reflow Temperature (Cel)
    260
  • Drain-source On Resistance-Max
    0.0075Ohm
  • Drain to Source Breakdown Voltage
    55V
  • Input Capacitance (Ciss) (Max) @ Vds
    2840pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    42A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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