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IRFR18N15DTRPBF
- Manufacturer's Part No.:IRFR18N15DTRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 150V 18A DPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 170462
- Available: 170462
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.66320 | US $1.66 |
10+ | US $1.10880 | US $11.09 |
30+ | US $0.83160 | US $24.95 |
100+ | US $0.66528 | US $66.53 |
500+ | US $0.60984 | US $304.92 |
1000+ | US $0.55440 | US $554.40 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFR18N15DTRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width6.22mm
- Height2.3876mm
- Length6.7056mm
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published2004
- Rise Time25ns
- Vgs (Max)±30V
- Resistance125mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs5.5 V
- Part StatusNot For New Designs
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating18A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Fall Time (Typ)9.8 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Power Dissipation110W
- Threshold Voltage5.5V
- Number of Elements1
- Turn On Delay Time8.8 ns
- Vgs(th) (Max) @ Id5.5V @ 250μA
- Voltage - Rated DC150V
- Dual Supply Voltage150V
- Radiation HardeningNo
- Turn-Off Delay Time15 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max110W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs125m Ω @ 11A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)200 mJ
- Continuous Drain Current (ID)18A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)72A
- Drain to Source Breakdown Voltage150V
- Input Capacitance (Ciss) (Max) @ Vds900pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C18A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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