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IRFR3303TRPBF

  • Available: 188817

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.55960US $2.56
10+US $1.70640US $17.06
30+US $1.27980US $38.39
100+US $1.02384US $102.38
500+US $0.93852US $469.26
1000+US $0.85320US $853.20

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRFR3303TRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6.22mm
  • Height
    2.3876mm
  • Length
    6.7056mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead, Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • Rise Time
    99ns
  • Vgs (Max)
    ±20V
  • Resistance
    31mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Not For New Designs
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • JEDEC-95 Code
    TO-252AA
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    33A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    28 ns
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    57W
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
  • Number of Elements
    1
  • Turn On Delay Time
    11 ns
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Voltage - Rated DC
    30V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    16 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    57W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    31m Ω @ 18A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    20A
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    95 mJ
  • Continuous Drain Current (ID)
    33A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    750pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    33A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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