IRFR3303TRPBF
- Manufacturer's Part No.:IRFR3303TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 30V 33A DPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 188817
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.55960 | US $2.56 |
10+ | US $1.70640 | US $17.06 |
30+ | US $1.27980 | US $38.39 |
100+ | US $1.02384 | US $102.38 |
500+ | US $0.93852 | US $469.26 |
1000+ | US $0.85320 | US $853.20 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFR3303TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width6.22mm
- Height2.3876mm
- Length6.7056mm
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTape & Reel (TR)
- Published2004
- Rise Time99ns
- Vgs (Max)±20V
- Resistance31mOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusNot For New Designs
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating33A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)28 ns
- Factory Lead Time12 Weeks
- Power Dissipation57W
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time11 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC30V
- Radiation HardeningNo
- Turn-Off Delay Time16 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max57W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs31m Ω @ 18A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)20A
- Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)95 mJ
- Continuous Drain Current (ID)33A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds750pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C33A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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