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IRFR3410TRPBF
- Manufacturer's Part No.:IRFR3410TRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 100V 31A DPAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 200000
- Available: 197006
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.76320 | US $0.76 |
10+ | US $0.50880 | US $5.09 |
30+ | US $0.38160 | US $11.45 |
100+ | US $0.30528 | US $30.53 |
500+ | US $0.27984 | US $139.92 |
1000+ | US $0.25440 | US $254.40 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFR3410TRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width6.22mm
- Height2.3876mm
- Length6.7056mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2004
- Rise Time27ns
- Vgs (Max)±20V
- Resistance39MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating31A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)13 ns
- Factory Lead Time12 Weeks
- Power Dissipation110W
- Threshold Voltage4V
- Number of Elements1
- Turn On Delay Time12 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC100V
- Dual Supply Voltage100V
- Radiation HardeningNo
- Turn-Off Delay Time40 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max3W Ta 110W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs39m Ω @ 18A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)31A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds1690pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C31A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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