IRFR3711TRLPBF
- Manufacturer's Part No.:IRFR3711TRLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 20V 100A DPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 182640
- Available: 182640
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.55232 | US $1.55 |
10+ | US $1.03488 | US $10.35 |
30+ | US $0.77616 | US $23.28 |
100+ | US $0.62093 | US $62.09 |
500+ | US $0.56918 | US $284.59 |
1000+ | US $0.51744 | US $517.44 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFR3711TRLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width6.22mm
- Height2.3876mm
- Length6.7056mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2004
- Rise Time220ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusNot For New Designs
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating110A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Fall Time (Typ)12 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time14 Weeks
- Power Dissipation120W
- Terminal PositionSINGLE
- Number of Elements1
- Turn On Delay Time12 ns
- Vgs(th) (Max) @ Id3V @ 250μA
- Voltage - Rated DC20V
- Radiation HardeningNo
- Turn-Off Delay Time17 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.5W Ta 120W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs6.5m Ω @ 15A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs44nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)460 mJ
- Continuous Drain Current (ID)110A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.0065Ohm
- Pulsed Drain Current-Max (IDM)440A
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds2980pF @ 10V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C100A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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