IRFR4620TRLPBF
- Manufacturer's Part No.:IRFR4620TRLPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 200V 24A DPAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 6000
- Available: 112317
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.15566 | US $1.16 |
10+ | US $0.77044 | US $7.70 |
30+ | US $0.57783 | US $17.33 |
100+ | US $0.46226 | US $46.23 |
500+ | US $0.42374 | US $211.87 |
1000+ | US $0.38522 | US $385.22 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFR4620TRLPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width6.73mm
- Height2.52mm
- Length10.3886mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2009
- Rise Time22.4ns
- Vgs (Max)±20V
- Resistance78MOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Fall Time (Typ)14.8 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation144W
- Number of Channels1
- Number of Elements1
- Turn On Delay Time13.4 ns
- Vgs(th) (Max) @ Id5V @ 100μA
- Radiation HardeningNo
- Turn-Off Delay Time25.4 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max144W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs78m Ω @ 15A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)24A
- Max Junction Temperature (Tj)175°C
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage200V
- Input Capacitance (Ciss) (Max) @ Vds1710pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C24A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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