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IRFR9024NTRPBF

  • In Stock: 200
  • Available: 207917

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.32742US $0.33
10+US $0.21828US $2.18
30+US $0.16371US $4.91
100+US $0.13097US $13.10
500+US $0.12005US $60.03
1000+US $0.10914US $109.14

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Description

The IRFR9024NTRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for high-efficiency power management applications, making it suitable for a variety of uses in both consumer and industrial electronics.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The IRFR9024NTRPBF is typically housed in a TO-220 package, which is a standard package for power devices, providing good thermal performance and ease of mounting.
  3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 40V, allowing it to handle a wide range of applications without risk of breakdown.
  4. Current Rating: It can handle a continuous drain current (I_D) of up to 60A, making it suitable for high-power applications.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.025 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.
  6. Gate Threshold Voltage (V_GS(th)): The threshold voltage is typically between 2V to 4V, which allows for easy driving with standard logic levels.
  7. Switching Speed: The IRFR9024NTRPBF features fast switching capabilities, which is essential for applications such as DC-DC converters, motor drives, and other switching power supplies.
  8. Thermal Characteristics: The device has a maximum junction temperature (T_j) of 175°C, which provides a good thermal margin for high-temperature applications. The TO-220 package also allows for effective heat dissipation.
  9. Applications: Common applications include power management in computers, automotive systems, and industrial equipment, as well as in renewable energy systems like solar inverters.

Electrical Characteristics:

  • Gate-Source Voltage (V_GS): ±20V maximum
  • Body Diode Characteristics: The IRFR9024NTRPBF includes an intrinsic body diode, which can conduct current in the reverse direction, making it useful in applications requiring freewheeling diodes.

Compliance and Standards:

The IRFR9024NTRPBF is compliant with RoHS (Restriction of Hazardous Substances) standards, ensuring that it is free from certain hazardous materials, making it environmentally friendly.

Conclusion:

The IRFR9024NTRPBF from Infineon Technologies is a robust and efficient N-channel MOSFET that is well-suited for a variety of high-power applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a popular choice among engineers and designers looking to optimize power management in their electronic systems.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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