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IRFS3107-7PPBF

  • In Stock: 3645
  • Available: 3645

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $7.67198US $7.67
10+US $6.90478US $69.05
30+US $5.37039US $161.11
100+US $4.41139US $441.14
500+US $4.21959US $2109.80
1000+US $3.83599US $3835.99

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRFS3107-7PPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    9.65mm
  • Height
    4.572mm
  • Length
    10.668mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2005
  • Rise Time
    80ns
  • Vgs (Max)
    ±20V
  • Resistance
    2.6MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    4 V
  • Part Status
    Discontinued
  • Subcategory
    FET General Purpose Power
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    7
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    64 ns
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    370W
  • Threshold Voltage
    4V
  • Number of Elements
    1
  • Turn On Delay Time
    17 ns
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Dual Supply Voltage
    75V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    100 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    370W Tc
  • Reverse Recovery Time
    52 ns
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    2.6m Ω @ 160A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    240A
  • Gate Charge (Qg) (Max) @ Vgs
    240nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    320 mJ
  • Continuous Drain Current (ID)
    260A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    75V
  • Input Capacitance (Ciss) (Max) @ Vds
    9200pF @ 50V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    240A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G6
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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