IRFS4127TRLPBF
- Manufacturer's Part No.:IRFS4127TRLPBF
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- Series:HEXFET®
- Description:MOSFET N-CH 200V 72A D2PAK
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- In Stock: 2160
- Available: 40660
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.93640 | US $2.94 |
10+ | US $1.95760 | US $19.58 |
30+ | US $1.46820 | US $44.05 |
100+ | US $1.17456 | US $117.46 |
500+ | US $1.07668 | US $538.34 |
1000+ | US $0.97880 | US $978.80 |
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- Description
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The IRFS4127TRLPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for a variety of applications, including power management, motor control, and DC-DC converters, where efficient switching and low on-resistance are critical.
Key Features:
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N-Channel Configuration: The IRFS4127TRLPBF is an N-channel MOSFET, which means it is designed to conduct when a positive voltage is applied to the gate relative to the source. This configuration is commonly used in high-side and low-side switching applications.
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Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of 55V, making it suitable for applications that require handling moderate voltage levels.
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Current Rating: It can handle a continuous drain current (I_D) of up to 120A at a specified temperature, which allows it to manage significant power loads effectively.
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On-Resistance (R_DS(on)): One of the standout features of the IRFS4127TRLPBF is its low on-resistance, typically around 0.015 ohms at a gate-source voltage (V_GS) of 10V. This low R_DS(on) minimizes power losses during operation, enhancing overall efficiency.
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Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2V and 4V, which indicates the voltage required to start turning the MOSFET on. This feature allows for compatibility with various control circuits.
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Package Type: The IRFS4127TRLPBF is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications. The package design also facilitates easy mounting on PCBs.
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Thermal Characteristics: The device has a maximum junction temperature (T_J) rating of 175°C, allowing it to operate in demanding thermal environments. Its thermal resistance from junction to case (RθJC) is low, which helps in effective heat management.
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Fast Switching Speed: The IRFS4127TRLPBF is designed for fast switching applications, making it ideal for use in high-frequency circuits. This characteristic is essential for applications like PWM (Pulse Width Modulation) control.
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RoHS Compliance: The component is RoHS compliant, meaning it is free from hazardous substances, making it suitable for environmentally conscious designs.
Applications:
- Power Supply Circuits: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
- Motor Drives: Ideal for driving DC motors and brushless DC motors due to its high current handling capability.
- Battery Management Systems: Utilized in battery protection circuits and charging applications.
- LED Drivers: Suitable for driving high-power LEDs with efficient current control.
Conclusion:
The IRFS4127TRLPBF from Infineon Technologies is a robust and efficient N-channel MOSFET that offers excellent performance for a wide range of power management applications. Its combination of high current capacity, low on-resistance, and fast switching capabilities makes it a preferred choice for engineers looking to optimize their designs for efficiency and reliability.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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