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IRFS7530PBF

  • Available: 3676

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.80510US $4.81
10+US $4.32459US $43.25
30+US $3.36357US $100.91
100+US $2.76293US $276.29
500+US $2.64281US $1321.41
1000+US $2.40255US $2402.55

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRFS7530PBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®, StrongIRFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Weight
    3.949996g
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2013
  • Rise Time
    141ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Discontinued
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    104 ns
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    375W
  • Terminal Position
    SINGLE
  • Threshold Voltage
    3.7V
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    52 ns
  • Vgs(th) (Max) @ Id
    3.7V @ 250μA
  • Turn-Off Delay Time
    172 ns
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    375W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    2m Ω @ 100A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    411nC @ 10V
  • Gate to Source Voltage (Vgs)
    3.7V
  • Continuous Drain Current (ID)
    195A
  • Peak Reflow Temperature (Cel)
    260
  • Drain-source On Resistance-Max
    0.002Ohm
  • Pulsed Drain Current-Max (IDM)
    760A
  • Drain to Source Breakdown Voltage
    60V
  • Input Capacitance (Ciss) (Max) @ Vds
    13703pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Current - Continuous Drain (Id) @ 25°C
    195A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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