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IRFSL3206PBF
- Manufacturer's Part No.:IRFSL3206PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 60V 120A TO-262
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 2475
- Available: 61312
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $28.00000 | US $28.00 |
10+ | US $21.00000 | US $210.00 |
30+ | US $18.20000 | US $546.00 |
100+ | US $16.10000 | US $1610.00 |
500+ | US $15.12000 | US $7560.00 |
1000+ | US $14.00000 | US $14000.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFSL3206PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.826mm
- Height9.65mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2008
- Rise Time82ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeThrough Hole
- Current Rating210A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Case ConnectionDRAIN
- Fall Time (Typ)83 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation300W
- Terminal PositionSINGLE
- Number of Elements1
- Turn On Delay Time19 ns
- Vgs(th) (Max) @ Id4V @ 150μA
- Voltage - Rated DC60V
- Radiation HardeningNo
- Turn-Off Delay Time55 ns
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max300W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs3m Ω @ 75A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)120A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)840A
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds6540pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C120A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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