IRFSL4610PBF
- Manufacturer's Part No.:IRFSL4610PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 100V 73A TO-262
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 3997
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFSL4610PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.826mm
- Height9.65mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2010
- Rise Time87ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeThrough Hole
- Current Rating73A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Fall Time (Typ)70 ns
- Power Dissipation190W
- Terminal PositionSINGLE
- Number of Elements1
- Turn On Delay Time18 ns
- Vgs(th) (Max) @ Id4V @ 100μA
- Voltage - Rated DC100V
- Radiation HardeningNo
- Turn-Off Delay Time3 ns
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max190W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs14m Ω @ 44A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)73A
- Pulsed Drain Current-Max (IDM)290A
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds3550pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C73A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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