IRFU1018EPBF
- Manufacturer's Part No.:IRFU1018EPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 60V 56A I-PAK
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- In Stock: 3899
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- Available: 3899
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFU1018EPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width2.3876mm
- Height6.22mm
- Length6.7056mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2009
- Rise Time35ns
- Vgs (Max)±20V
- Resistance8.4MOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Recovery Time39 ns
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Case ConnectionDRAIN
- Fall Time (Typ)46 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Power Dissipation110W
- Threshold Voltage4V
- Number of Elements1
- Turn On Delay Time13 ns
- Vgs(th) (Max) @ Id4V @ 100μA
- Radiation HardeningNo
- Turn-Off Delay Time55 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max110W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs8.4m Ω @ 47A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)79A
- Gate Charge (Qg) (Max) @ Vgs69nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)88 mJ
- Continuous Drain Current (ID)56A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds2290pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C56A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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