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IRFU3303PBF
- Manufacturer's Part No.:IRFU3303PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 30V 33A I-PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3831
- Price: please call
- Available: 3831
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFU3303PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width2.3876mm
- Height6.22mm
- Length6.7056mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2004
- Rise Time99ns
- Vgs (Max)±20V
- Rds On Max31 mΩ
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Current Rating33A
- Number of Pins3
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Fall Time (Typ)28 ns
- Input Capacitance750pF
- Power Dissipation57W
- Turn On Delay Time11 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC30V
- Radiation HardeningNo
- Turn-Off Delay Time16 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max57W Tc
- Rds On (Max) @ Id, Vgs31mOhm @ 18A, 10V
- Supplier Device PackageIPAK (TO-251)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Drain to Source Resistance31mOhm
- Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)33A
- Drain to Source Voltage (Vdss)30V
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds750pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C33A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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