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IRFU3709ZPBF
- Manufacturer's Part No.:IRFU3709ZPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 30V 86A I-PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3603
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- Available: 3603
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFU3709ZPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width9.78mm
- Height2.39mm
- Length6.73mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published2004
- Rise Time12ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.8 V
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Current Rating86A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Case ConnectionDRAIN
- Fall Time (Typ)3.9 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Power Dissipation79W
- Number of Elements1
- Turn On Delay Time12 ns
- Vgs(th) (Max) @ Id2.25V @ 250μA
- Voltage - Rated DC30V
- Radiation HardeningNo
- Turn-Off Delay Time15 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max79W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs6.5m Ω @ 15A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)86A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.0065Ohm
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds2330pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C86A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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