Image is for your reference only, please check specifications for details
iconCompare
icon

IRFU5410PBF

  • In Stock: 10000
  • Available: 25781

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.81840US $0.82
10+US $0.54560US $5.46
30+US $0.40920US $12.28
100+US $0.32736US $32.74
500+US $0.30008US $150.04
1000+US $0.27280US $272.80

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ
  • esd
  • as
  • iso14001
  • iso9001
  • D&B

Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRFU5410PBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    2.3876mm
  • Height
    6.22mm
  • Length
    6.7056mm
  • FET Type
    P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    1999
  • Rise Time
    58ns
  • Vgs (Max)
    ±20V
  • Lead Pitch
    2.28mm
  • Technology
    MOSFET (Metal Oxide)
  • Lead Length
    9.65mm
  • Nominal Vgs
    -4 V
  • Part Status
    Active
  • Subcategory
    Other Transistors
  • Termination
    Through Hole
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Current Rating
    -13A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    46 ns
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    66W
  • Threshold Voltage
    -4V
  • Additional Feature
    HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
  • Number of Elements
    1
  • Turn On Delay Time
    15 ns
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Voltage - Rated DC
    -100V
  • Dual Supply Voltage
    -100V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    45 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    66W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    205m Ω @ 7.8A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    58nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    -13A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    100V
  • Drain-source On Resistance-Max
    0.205Ohm
  • Pulsed Drain Current-Max (IDM)
    52A
  • Drain to Source Breakdown Voltage
    -100V
  • Input Capacitance (Ciss) (Max) @ Vds
    760pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    13A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS non-compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance