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IRFU5410PBF
- Manufacturer's Part No.:IRFU5410PBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET P-CH 100V 13A I-PAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 10000
- Available: 25781
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.81840 | US $0.82 |
10+ | US $0.54560 | US $5.46 |
30+ | US $0.40920 | US $12.28 |
100+ | US $0.32736 | US $32.74 |
500+ | US $0.30008 | US $150.04 |
1000+ | US $0.27280 | US $272.80 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFU5410PBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width2.3876mm
- Height6.22mm
- Length6.7056mm
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTube
- Published1999
- Rise Time58ns
- Vgs (Max)±20V
- Lead Pitch2.28mm
- TechnologyMOSFET (Metal Oxide)
- Lead Length9.65mm
- Nominal Vgs-4 V
- Part StatusActive
- SubcategoryOther Transistors
- TerminationThrough Hole
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Current Rating-13A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Case ConnectionDRAIN
- Fall Time (Typ)46 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation66W
- Threshold Voltage-4V
- Additional FeatureHIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time15 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC-100V
- Dual Supply Voltage-100V
- Radiation HardeningNo
- Turn-Off Delay Time45 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max66W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs205m Ω @ 7.8A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs58nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)-13A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)100V
- Drain-source On Resistance-Max0.205Ohm
- Pulsed Drain Current-Max (IDM)52A
- Drain to Source Breakdown Voltage-100V
- Input Capacitance (Ciss) (Max) @ Vds760pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C13A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS non-compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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