IRFU9024NPBF
- Manufacturer's Part No.:IRFU9024NPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET P-CH 55V 11A I-PAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 5400
- Available: 97417
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.58446 | US $0.58 |
10+ | US $0.38964 | US $3.90 |
30+ | US $0.29223 | US $8.77 |
100+ | US $0.23378 | US $23.38 |
500+ | US $0.21430 | US $107.15 |
1000+ | US $0.19482 | US $194.82 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFU9024NPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width2.3876mm
- Height6.22mm
- Length6.7056mm
- FET TypeP-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTube
- Published1997
- Rise Time55ns
- Vgs (Max)±20V
- Resistance175mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs-4 V
- Part StatusActive
- SubcategoryOther Transistors
- TerminationThrough Hole
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Recovery Time71 ns
- Current Rating-1.6A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Case ConnectionDRAIN
- Fall Time (Typ)37 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Power Dissipation38W
- Threshold Voltage-4V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Number of Elements1
- Turn On Delay Time13 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC-60V
- Dual Supply Voltage-55V
- Radiation HardeningNo
- Turn-Off Delay Time23 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max38W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs175m Ω @ 6.6A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)62 mJ
- Continuous Drain Current (ID)-11A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)55V
- Pulsed Drain Current-Max (IDM)44A
- Drain to Source Breakdown Voltage-55V
- Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C11A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS non-compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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