IRFZ24NPBF
- Manufacturer's Part No.:IRFZ24NPBF
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- Series:HEXFET®
- Description:MOSFET N-CH 55V 17A TO-220AB
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- In Stock: 330000
- Available: 121455
- Updated: 1 Day 23 HRS ago
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.32742 | US $0.33 |
10+ | US $0.21828 | US $2.18 |
30+ | US $0.16371 | US $4.91 |
100+ | US $0.13097 | US $13.10 |
500+ | US $0.12005 | US $60.03 |
1000+ | US $0.10914 | US $109.14 |
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- Description
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The IRFZ24NPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications, making it suitable for a variety of uses in power management, motor control, and other electronic circuits.
Key Features:
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N-Channel Configuration: The IRFZ24NPBF is an N-channel MOSFET, which means it uses electrons as the charge carriers. This configuration typically offers lower on-resistance and higher efficiency compared to P-channel MOSFETs.
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Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of 55V, allowing it to handle a wide range of applications without the risk of breakdown.
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Current Rating: It can handle a continuous drain current (I_D) of up to 49A at a temperature of 25°C, making it suitable for high-current applications.
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On-Resistance (R_DS(on)): The IRFZ24NPBF features a low on-resistance, typically around 0.035 ohms at a gate-source voltage (V_GS) of 10V. This low R_DS(on) contributes to reduced power losses and improved thermal performance.
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Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is specified between 2V and 4V, which indicates the minimum gate voltage required to turn the MOSFET on. This allows for compatibility with various control voltages.
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Package Type: The IRFZ24NPBF is available in a TO-220 package, which provides good thermal performance and is easy to mount on heatsinks for effective heat dissipation.
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Thermal Characteristics: The device has a maximum junction temperature (T_J) of 175°C, allowing it to operate in demanding environments. Its thermal resistance from junction to case (RθJC) is low, facilitating efficient heat transfer.
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Fast Switching Speed: The IRFZ24NPBF is designed for fast switching applications, making it suitable for use in high-frequency circuits.
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RoHS Compliance: The part is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it is environmentally friendly and free from certain hazardous materials.
Applications:
The IRFZ24NPBF is widely used in various applications, including:
- Power Supplies: It is commonly found in switch-mode power supplies (SMPS) and DC-DC converters due to its efficiency and high current handling capabilities.
- Motor Control: The MOSFET is suitable for driving motors in applications such as robotics, electric vehicles, and industrial automation.
- Lighting: It can be used in LED drivers and other lighting control circuits.
- Battery Management Systems: The device is effective in managing battery charging and discharging processes.
Conclusion:
The IRFZ24NPBF from Infineon Technologies is a robust and efficient N-channel MOSFET that offers excellent performance for a variety of power management applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it a popular choice among engineers and designers in the electronics industry.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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