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IRFZ24NSTRRPBF
- Manufacturer's Part No.:IRFZ24NSTRRPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 55V 17A D2PAK
- Datasheet:
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- In Stock: 3970
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- Available: 3970
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFZ24NSTRRPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.699mm
- Length10.668mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2004
- Rise Time34ns
- Vgs (Max)±20V
- Rds On Max70 mΩ
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Current Rating17A
- Number of Pins3
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ)27 ns
- Input Capacitance370pF
- Power Dissipation45W
- Number of Elements1
- Turn On Delay Time4.9 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC55V
- Radiation HardeningNo
- Turn-Off Delay Time19 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max3.8W Ta 45W Tc
- Rds On (Max) @ Id, Vgs70mOhm @ 10A, 10V
- Supplier Device PackageD2PAK
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Drain to Source Resistance70mOhm
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)17A
- Drain to Source Voltage (Vdss)55V
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds370pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C17A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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