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IRFZ44EL
- Manufacturer's Part No.:IRFZ44EL
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 60V 48A TO-262
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3967
- Price: please call
- Available: 3967
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFZ44EL
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- FET TypeN-Channel
- PackagingTube
- Published1997
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeThrough Hole
- Surface MountNO
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Number of Elements1
- Vgs(th) (Max) @ Id4V @ 250μA
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max110W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs23m Ω @ 29A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min60V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)48A
- Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
- Avalanche Energy Rating (Eas)220 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)60V
- Drain-source On Resistance-Max0.023Ohm
- Pulsed Drain Current-Max (IDM)192A
- Input Capacitance (Ciss) (Max) @ Vds1360pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C48A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PSIP-T3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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