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IRFZ46NPBF
- Manufacturer's Part No.:IRFZ46NPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 55V 53A TO-220AB
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 5000
- Available: 77289
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.96000 | US $0.96 |
10+ | US $0.64000 | US $6.40 |
30+ | US $0.48000 | US $14.40 |
100+ | US $0.38400 | US $38.40 |
500+ | US $0.35200 | US $176.00 |
1000+ | US $0.32000 | US $320.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRFZ46NPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.69mm
- Height8.77mm
- Length10.54mm
- Current40A
- Voltage55V
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTube
- Published2002
- Rise Time76ns
- Vgs (Max)±20V
- Lead Pitch2.54mm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- TerminationThrough Hole
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Recovery Time101 ns
- Current Rating53A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)57 ns
- Factory Lead Time12 Weeks
- Power Dissipation88W
- Threshold Voltage4V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC55V
- Dual Supply Voltage55V
- Turn-Off Delay Time52 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max107W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs16.5m Ω @ 28A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)53A
- Peak Reflow Temperature (Cel)250
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds1696pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C53A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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