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IRFZ48NPBF

  • In Stock: 11000
  • Available: 70315

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.92412US $0.92
10+US $0.61608US $6.16
30+US $0.46206US $13.86
100+US $0.36965US $36.96
500+US $0.33884US $169.42
1000+US $0.30804US $308.04

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  • Description
  • Alternatives
  • Shopping Guide
Description

The IRFZ48NPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications, making it suitable for a variety of uses in power management, motor control, and other electronic circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: Typically available in a TO-220 package, which provides good thermal performance and is easy to mount on heatsinks.
  3. Voltage Rating: The IRFZ48NPBF has a maximum drain-source voltage (V_DS) of 55V, allowing it to handle a wide range of applications without risk of breakdown.
  4. Current Rating: It can handle a continuous drain current (I_D) of up to 49A at a specified temperature, making it suitable for high-current applications.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.025 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.
  6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2V to 4V, which means it starts to conduct at relatively low gate voltages, allowing for easier drive requirements.
  7. Switching Speed: The IRFZ48NPBF features fast switching capabilities, making it suitable for high-frequency applications.
  8. Thermal Characteristics: The device has a maximum junction temperature of 175°C, which allows for operation in demanding thermal environments. Its TO-220 package also aids in effective heat dissipation.
  9. Applications: Commonly used in power supplies, DC-DC converters, motor drivers, and other applications requiring efficient power management.

Electrical Characteristics:

  • Gate-Source Voltage (V_GS): Maximum of ±20V
  • Body Diode Characteristics: The IRFZ48NPBF includes an intrinsic body diode, which allows for reverse current flow and can be beneficial in certain applications like synchronous rectification.

Compliance and Standards:

  • The IRFZ48NPBF is compliant with RoHS (Restriction of Hazardous Substances) standards, ensuring it is environmentally friendly and safe for use in consumer electronics.

Conclusion:

The IRFZ48NPBF from Infineon Technologies is a robust and efficient N-channel MOSFET that is well-suited for a variety of power applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a popular choice among engineers and designers looking to optimize their electronic circuits for performance and efficiency.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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