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IRG4BC10SD

  • Available: 3645

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRG4BC10SD
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • Polarity/Channel Type
    N-CHANNEL
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Package / Case
    TO-220-3
  • Part Status
    Obsolete
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Surface Mount
    YES
  • Number of Terminations
    2
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Published
    2000
  • Additional Feature
    LOW CONDUCTION LOSS
  • Case Connection
    COLLECTOR
  • Current - Collector (Ic) (Max)
    14A
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Power - Max
    38W
  • Mounting Type
    Through Hole
  • Transistor Element Material
    SILICON
  • Transistor Application
    POWER CONTROL
  • Turn On Time
    106 ns
  • Input Type
    Standard
  • Reverse Recovery Time
    28ns
  • Test Condition
    480V, 8A, 100 Ω, 15V
  • Gate Charge
    15nC
  • Current - Collector Pulsed (Icm)
    18A
  • Switching Energy
    310μJ (on), 3.28mJ (off)
  • Turn Off Time-Nom (toff)
    1780 ns
  • Td (on/off) @ 25°C
    76ns/815ns
  • Vce(on) (Max) @ Vge, Ic
    1.8V @ 15V, 8A

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    Non-RoHS Compliant
  • JESD-609 Code
    e3
  • JESD-30 Code
    R-PSSO-G2

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