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IRG4BC15UD-LPBF

  • Available: 50354

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.99960US $4.00
10+US $3.59964US $36.00
30+US $2.79972US $83.99
100+US $2.29977US $229.98
500+US $2.19978US $1099.89
1000+US $1.99980US $1999.80

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRG4BC15UD-LPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.826mm
  • Height
    9.652mm
  • Length
    10.668mm
  • Weight
    2.084002g
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2001
  • Rise Time
    20ns
  • Input Type
    Standard
  • Gate Charge
    23nC
  • Part Status
    Last Time Buy
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    37 ns
  • Mounting Type
    Through Hole
  • Current Rating
    14A
  • Number of Pins
    3
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Test Condition
    480V, 7.8A, 75 Ω, 15V
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Switching Energy
    240μJ (on), 260μJ (off)
  • Factory Lead Time
    13 Weeks
  • Power Dissipation
    49W
  • Number of Elements
    1
  • Turn On Delay Time
    17 ns
  • Voltage - Rated DC
    600V
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    17ns/160ns
  • Turn-Off Delay Time
    160 ns
  • Element Configuration
    Single
  • Max Collector Current
    14A
  • Max Power Dissipation
    49W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    28 ns
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 7.8A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    400 ns
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6V
  • Peak Reflow Temperature (Cel)
    260
  • Collector Emitter Voltage (VCEO)
    2.4V
  • Current - Collector Pulsed (Icm)
    42A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.02V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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