IRG4BC20KD-SPBF
- Manufacturer's Part No.:IRG4BC20KD-SPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 600V 16A 60W D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 291
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.73136 | US $2.73 |
10+ | US $2.45822 | US $24.58 |
30+ | US $1.91195 | US $57.36 |
100+ | US $1.57053 | US $157.05 |
500+ | US $1.50225 | US $751.13 |
1000+ | US $1.36568 | US $1365.68 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRG4BC20KD-SPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountSurface Mount
- Width4.826mm
- Height4.83mm
- Length10.668mm
- Weight2g
- Lead FreeLead Free
- PackagingTube
- Published2000
- Rise Time37ns
- Input TypeStandard
- Gate Charge34nC
- Part StatusLast Time Buy
- SubcategoryInsulated Gate BIP Transistors
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Turn On Time88 ns
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating16A
- Number of Pins3
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Test Condition480V, 9A, 50 Ω, 15V
- Case ConnectionCOLLECTOR
- Forward Current7A
- Terminal FinishMatte Tin (Sn)
- Base Part NumberIRG4BC20KD-SPBF
- Switching Energy340μJ (on), 300μJ (off)
- Factory Lead Time18 Weeks
- Power Dissipation60W
- Additional FeatureULTRA FAST SOFT RECOVERY
- Fall Time-Max (tf)110ns
- Number of Elements1
- Turn On Delay Time54 ns
- Voltage - Rated DC600V
- Radiation HardeningNo
- Td (on/off) @ 25°C54ns/180ns
- Turn-Off Delay Time180 ns
- Element ConfigurationSingle
- Max Collector Current16A
- Max Power Dissipation60W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time37 ns
- Number of Terminations2
- Transistor ApplicationMOTOR CONTROL
- Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 9A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)380 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max6V
- Peak Reflow Temperature (Cel)260
- Collector Emitter Voltage (VCEO)2.8V
- Max Forward Surge Current (Ifsm)32A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.27V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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