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IRG4BC20UD-SPBF

  • Available: 3895

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.78520US $4.79
10+US $4.30668US $43.07
30+US $3.34964US $100.49
100+US $2.75149US $275.15
500+US $2.63186US $1315.93
1000+US $2.39260US $2392.60

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRG4BC20UD-SPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    9.65mm
  • Height
    4.699mm
  • Length
    10.668mm
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2001
  • Rise Time
    15ns
  • Input Type
    Standard
  • Gate Charge
    27nC
  • Part Status
    Obsolete
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    55 ns
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    13A
  • Number of Pins
    3
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Test Condition
    480V, 6.5A, 50 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Switching Energy
    160μJ (on), 130μJ (off)
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    60W
  • Fall Time-Max (tf)
    170ns
  • Number of Elements
    1
  • Voltage - Rated DC
    600V
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    39ns/93ns
  • Element Configuration
    Single
  • Max Collector Current
    13A
  • Max Power Dissipation
    60W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    37 ns
  • Number of Terminations
    2
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 6.5A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    320 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6V
  • Peak Reflow Temperature (Cel)
    260
  • ak Reflow Temperature-Max (s)
    30
  • Collector Emitter Voltage (VCEO)
    2.1V
  • Current - Collector Pulsed (Icm)
    52A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.1V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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