IRG4BC20UDSTRLP
- Manufacturer's Part No.:IRG4BC20UDSTRLP
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 600V 13A 60W D2PAK
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- Available: 2695
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRG4BC20UDSTRLP
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- Polarity/Channel TypeN-CHANNEL
- Time@Peak Reflow Temperature-Max (s)30
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Part StatusObsolete
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SubcategoryInsulated Gate BIP Transistors
- Surface MountYES
- Number of Terminations2
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Published2010
- Case ConnectionCOLLECTOR
- Current - Collector (Ic) (Max)13A
- Voltage - Collector Emitter Breakdown (Max)600V
- Power - Max60W
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Transistor ApplicationPOWER CONTROL
- Power Dissipation-Max (Abs)60W
- Turn On Time55 ns
- Fall Time-Max (tf)170ns
- Input TypeStandard
- Reverse Recovery Time37ns
- Test Condition480V, 6.5A, 50 Ω, 15V
- Gate Charge27nC
- Current - Collector Pulsed (Icm)52A
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6V
- Switching Energy160μJ (on), 130μJ (off)
- Turn Off Time-Nom (toff)320 ns
- Td (on/off) @ 25°C39ns/93ns
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 6.5A
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- JESD-30 CodeR-PSSO-G2
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