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IRG4BC30KDSTRLP

  • In Stock: 37059
  • Available: 1600

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.49244US $3.49
10+US $3.14320US $31.43
30+US $2.44471US $73.34
100+US $2.00815US $200.82
500+US $1.92084US $960.42
1000+US $1.74622US $1746.22

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRG4BC30KDSTRLP
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Weight
    260.39037mg
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2000
  • Input Type
    Standard
  • Gate Charge
    67nC
  • Part Status
    Last Time Buy
  • Power - Max
    100W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    100 ns
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Test Condition
    480V, 16A, 23 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Base Part Number
    IRG4BC30KD-SPBF
  • Switching Energy
    600μJ (on), 580μJ (off)
  • Factory Lead Time
    13 Weeks
  • Additional Feature
    LOW CONDUCTION LOSS
  • Fall Time-Max (tf)
    120ns
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    60ns/160ns
  • Element Configuration
    Single
  • Max Breakdown Voltage
    600V
  • Max Collector Current
    28A
  • Max Power Dissipation
    100W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    42 ns
  • Number of Terminations
    2
  • Transistor Application
    MOTOR CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 16A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    370 ns
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6V
  • Peak Reflow Temperature (Cel)
    260
  • Collector Emitter Voltage (VCEO)
    2.7V
  • Current - Collector Pulsed (Icm)
    56A
  • Collector Emitter Breakdown Voltage
    600V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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