IRG4BC30U-STRRP
- Manufacturer's Part No.:IRG4BC30U-STRRP
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- Series:-
- Description:IGBT 600V 23A 100W D2PAK
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- Available: 3163
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRG4BC30U-STRRP
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountSurface Mount
- Weight260.39037mg
- PackagingTape & Reel (TR)
- Published2010
- Input TypeStandard
- Gate Charge50nC
- Part StatusObsolete
- Power - Max100W
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time33 ns
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Test Condition480V, 12A, 23 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishMATTE TIN OVER NICKEL
- Base Part NumberIRG4BC30U-SPBF
- Switching Energy160μJ (on), 200μJ (off)
- Fall Time-Max (tf)150ns
- Number of Elements1
- Radiation HardeningNo
- Td (on/off) @ 25°C17ns/78ns
- Element ConfigurationSingle
- Max Breakdown Voltage600V
- Max Collector Current23A
- Max Power Dissipation100W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations2
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 12A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)320 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max6V
- Peak Reflow Temperature (Cel)260
- Collector Emitter Voltage (VCEO)2.1V
- Current - Collector Pulsed (Icm)92A
- Collector Emitter Breakdown Voltage600V
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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