IRG4BC40W-SPBF
- Manufacturer's Part No.:IRG4BC40W-SPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 600V 40A 160W D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 685
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.77760 | US $3.78 |
10+ | US $3.39984 | US $34.00 |
30+ | US $2.64432 | US $79.33 |
100+ | US $2.17212 | US $217.21 |
500+ | US $2.07768 | US $1038.84 |
1000+ | US $1.88880 | US $1888.80 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRG4BC40W-SPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountSurface Mount, Through Hole
- Width4.826mm
- Height4.83mm
- Length10.668mm
- Lead FreeLead Free
- PackagingTube
- Published2004
- Rise Time23ns
- Input TypeStandard
- Gate Charge98nC
- Part StatusLast Time Buy
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time48 ns
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating40A
- Number of Pins3
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Test Condition480V, 20A, 10 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Switching Energy110μJ (on), 230μJ (off)
- Factory Lead Time8 Weeks
- Power Dissipation160W
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (tf)110ns
- Number of Elements1
- Turn On Delay Time27 ns
- Voltage - Rated DC600V
- Radiation HardeningNo
- Td (on/off) @ 25°C27ns/100ns
- Turn-Off Delay Time100 ns
- Element ConfigurationDual
- Max Collector Current40A
- Max Power Dissipation160W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations2
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)294 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max6V
- Peak Reflow Temperature (Cel)260
- Collector Emitter Voltage (VCEO)2.5V
- Current - Collector Pulsed (Icm)160A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.05V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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