IRG4BH20K-LPBF
- Manufacturer's Part No.:IRG4BH20K-LPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 1200V 11A 60W TO262
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 40
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.38028 | US $2.38 |
10+ | US $2.14225 | US $21.42 |
30+ | US $1.66620 | US $49.99 |
100+ | US $1.36866 | US $136.87 |
500+ | US $1.30915 | US $654.58 |
1000+ | US $1.19014 | US $1190.14 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRG4BH20K-LPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- Width4.826mm
- Height9.65mm
- Length10.668mm
- Weight2.084002g
- Lead FreeContains Lead, Lead Free
- PackagingTube
- Published1997
- Rise Time26ns
- Input TypeStandard
- Gate Charge28nC
- Part StatusObsolete
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time51 ns
- Mounting TypeThrough Hole
- Current Rating11A
- Number of Pins3
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Test Condition960V, 5A, 50 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Switching Energy450μJ (on), 440μJ (off)
- Factory Lead Time13 Weeks
- Power Dissipation60W
- Terminal PositionSINGLE
- Additional FeatureULTRA FAST, LOW CONDUCTION LOSS
- Fall Time-Max (tf)400ns
- Number of Elements1
- Turn On Delay Time23 ns
- Voltage - Rated DC1.2kV
- Radiation HardeningNo
- Td (on/off) @ 25°C23ns/93ns
- Turn-Off Delay Time93 ns
- Element ConfigurationDual
- Max Collector Current11A
- Max Power Dissipation60W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations3
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic4.3V @ 15V, 5A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)720 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max6V
- Peak Reflow Temperature (Cel)260
- Collector Emitter Voltage (VCEO)4.3V
- Current - Collector Pulsed (Icm)22A
- Collector Emitter Breakdown Voltage1.2kV
- Collector Emitter Saturation Voltage3.17V
- Voltage - Collector Emitter Breakdown (Max)1200V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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