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IRG4IBC30KDPBF

  • Available: 330

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.98576US $3.99
10+US $3.58718US $35.87
30+US $2.79003US $83.70
100+US $2.29181US $229.18
500+US $2.19217US $1096.09
1000+US $1.99288US $1992.88

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRG4IBC30KDPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.826mm
  • Height
    16.129mm
  • Length
    10.7442mm
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2010
  • Rise Time
    42ns
  • Input Type
    Standard
  • Gate Charge
    67nC
  • Part Status
    Last Time Buy
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    100 ns
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Current Rating
    17A
  • Number of Pins
    3
  • Package / Case
    TO-220-3 Full Pack
  • Test Condition
    480V, 16A, 23 Ω, 15V
  • Case Connection
    ISOLATED
  • Switching Energy
    600μJ (on), 580μJ (off)
  • Factory Lead Time
    16 Weeks
  • Power Dissipation
    45W
  • Additional Feature
    ULTRA FAST SOFT RECOVERY
  • Fall Time-Max (tf)
    120ns
  • Number of Elements
    1
  • Turn On Delay Time
    60 ns
  • Voltage - Rated DC
    600V
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    60ns/160ns
  • Turn-Off Delay Time
    160 ns
  • Element Configuration
    Single
  • Max Collector Current
    17A
  • Max Power Dissipation
    45W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    42 ns
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 16A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    370 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6V
  • Collector Emitter Voltage (VCEO)
    2.7V
  • Current - Collector Pulsed (Icm)
    34A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.7V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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