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IRG4PC50UDPBF

  • In Stock: 100000
  • Available: 6686

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $28.56000US $28.56
10+US $21.42000US $214.20
30+US $18.56400US $556.92
100+US $16.42200US $1642.20
500+US $15.42240US $7711.20
1000+US $14.28000US $14280.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRG4PC50UDPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    5.3086mm
  • Height
    24.99mm
  • Length
    15.87mm
  • Weight
    38.000013g
  • Lead Free
    Contains Lead, Lead Free
  • Packaging
    Tube
  • Published
    2001
  • Rise Time
    25ns
  • Input Type
    Standard
  • Gate Charge
    180nC
  • Part Status
    Last Time Buy
  • Subcategory
    Insulated Gate BIP Transistors
  • Termination
    Through Hole
  • REACH Status
    REACH Unaffected
  • Turn On Time
    71 ns
  • JEDEC-95 Code
    TO-247AC
  • Mounting Type
    Through Hole
  • Current Rating
    55A
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    480V, 27A, 5 Ω, 15V
  • Case Connection
    COLLECTOR
  • Switching Energy
    990μJ (on), 590μJ (off)
  • Factory Lead Time
    14 Weeks
  • Input Capacitance
    4nF
  • Power Dissipation
    200W
  • Additional Feature
    ULTRA FAST SOFT RECOVERY
  • Number of Elements
    1
  • Turn On Delay Time
    46 ns
  • Voltage - Rated DC
    600V
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    46ns/140ns
  • Turn-Off Delay Time
    140 ns
  • Element Configuration
    Single
  • Max Collector Current
    55A
  • Max Power Dissipation
    200W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    50 ns
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 27A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    370 ns
  • Transistor Element Material
    SILICON
  • Continuous Collector Current
    55A
  • Gate-Emitter Thr Voltage-Max
    6V
  • Max Junction Temperature (Tj)
    150°C
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    220A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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