IRG4PH40KDPBF
- Manufacturer's Part No.:IRG4PH40KDPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 1200V 30A 160W TO247AC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 13999
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $28.00000 | US $28.00 |
10+ | US $21.00000 | US $210.00 |
30+ | US $18.20000 | US $546.00 |
100+ | US $16.10000 | US $1610.00 |
500+ | US $15.12000 | US $7560.00 |
1000+ | US $14.00000 | US $14000.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRG4PH40KDPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- Width5.3mm
- Height20.3mm
- Length15.875mm
- Lead FreeLead Free
- PackagingTube
- Published2000
- Rise Time31ns
- Input TypeStandard
- Gate Charge94nC
- Part StatusLast Time Buy
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time82 ns
- JEDEC-95 CodeTO-247AC
- Mounting TypeThrough Hole
- Current Rating30A
- Number of Pins3
- Package / CaseTO-247-3
- Test Condition800V, 15A, 10 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Switching Energy1.31mJ (on), 1.12mJ (off)
- Factory Lead Time14 Weeks
- Power Dissipation160W
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Turn On Delay Time50 ns
- Voltage - Rated DC1.2kV
- Radiation HardeningNo
- Td (on/off) @ 25°C50ns/96ns
- Turn-Off Delay Time96 ns
- Element ConfigurationSingle
- Max Collector Current30A
- Max Power Dissipation160W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time63 ns
- Number of Terminations3
- Transistor ApplicationMOTOR CONTROL
- Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 15A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)730 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max3V
- Peak Reflow Temperature (Cel)250
- Collector Emitter Voltage (VCEO)3.4V
- Current - Collector Pulsed (Icm)60A
- Collector Emitter Breakdown Voltage1.2kV
- Collector Emitter Saturation Voltage3.4V
- Voltage - Collector Emitter Breakdown (Max)1200V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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