IRG4PH50SPBF
- Manufacturer's Part No.:IRG4PH50SPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 1200V 57A 200W TO247AC
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 348
- Available: 13632
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $181.50000 | US $181.50 |
10+ | US $157.30000 | US $1573.00 |
30+ | US $142.78000 | US $4283.40 |
100+ | US $130.68000 | US $13068.00 |
500+ | US $127.05000 | US $63525.00 |
1000+ | US $121.00000 | US $121000.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRG4PH50SPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- Width5.3mm
- Height24.99mm
- Length15.875mm
- Weight38.000013g
- Lead FreeLead Free
- PackagingBulk
- Published2004
- Rise Time29ns
- Input TypeStandard
- Gate Charge167nC
- Part StatusLast Time Buy
- TerminationThrough Hole
- REACH StatusREACH Unaffected
- Turn On Time62 ns
- JEDEC-95 CodeTO-247AC
- Mounting TypeThrough Hole
- Current Rating57A
- Number of Pins3
- Package / CaseTO-247-3
- Test Condition960V, 33A, 5 Ω, 15V
- Case ConnectionCOLLECTOR
- Switching Energy1.8mJ (on), 19.6mJ (off)
- Factory Lead Time14 Weeks
- Input Capacitance3.6nF
- Power Dissipation200W
- Number of Elements1
- Turn On Delay Time32 ns
- Voltage - Rated DC1.2kV
- Radiation HardeningNo
- Td (on/off) @ 25°C32ns/845ns
- Turn-Off Delay Time845 ns
- Element ConfigurationSingle
- Max Collector Current57A
- Max Power Dissipation200W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations3
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 33A
- Turn Off Time-Nom (toff)2170 ns
- Transistor Element MaterialSILICON
- Continuous Collector Current57A
- Gate to Source Voltage (Vgs)30V
- Continuous Drain Current (ID)57A
- Max Junction Temperature (Tj)150°C
- Collector Emitter Voltage (VCEO)1.2kV
- Current - Collector Pulsed (Icm)114A
- Collector Emitter Breakdown Voltage1.2kV
- Collector Emitter Saturation Voltage1.75V
- Voltage - Collector Emitter Breakdown (Max)1200V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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