IRG4PSH71KDPBF
- Manufacturer's Part No.:IRG4PSH71KDPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 1200V 78A 350W SUPER247
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 22100
- Available: 6263
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $12.00000 | US $12.00 |
10+ | US $10.80000 | US $108.00 |
30+ | US $8.40000 | US $252.00 |
100+ | US $6.90000 | US $690.00 |
500+ | US $6.60000 | US $3300.00 |
1000+ | US $6.00000 | US $6000.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRG4PSH71KDPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- Width5.3mm
- Height20.8mm
- Length16.0782mm
- Lead FreeLead Free
- PackagingBulk
- Published1999
- Rise Time84ns
- Input TypeStandard
- Gate Charge410nC
- Part StatusLast Time Buy
- SubcategoryInsulated Gate BIP Transistors
- TerminationThrough Hole
- REACH StatusREACH Unaffected
- Turn On Time152 ns
- Mounting TypeThrough Hole
- Current Rating78A
- Number of Pins3
- Package / CaseTO-274AA
- Test Condition800V, 42A, 5 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Switching Energy5.68mJ (on), 3.23mJ (off)
- Factory Lead Time7 Weeks
- Power Dissipation350W
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (tf)190ns
- Number of Elements1
- Voltage - Rated DC1.2kV
- Radiation HardeningNo
- Td (on/off) @ 25°C67ns/230ns
- Element ConfigurationSingle
- Max Collector Current78A
- Max Power Dissipation350W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time107 ns
- Number of Terminations3
- Transistor ApplicationMOTOR CONTROL
- Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 42A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)660 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max6V
- Peak Reflow Temperature (Cel)250
- Collector Emitter Voltage (VCEO)3.9V
- Current - Collector Pulsed (Icm)156A
- Collector Emitter Breakdown Voltage1.2kV
- Collector Emitter Saturation Voltage2.97V
- Voltage - Collector Emitter Breakdown (Max)1200V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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