IRG4RC10KD
- Manufacturer's Part No.:IRG4RC10KD
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- Series:-
- Description:IGBT 600V 9A 38W DPAK
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- Available: 3051
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRG4RC10KD
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- PackagingTube
- Published2001
- Input TypeStandard
- Gate Charge19nC
- Part StatusObsolete
- Power - Max38W
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time78 ns
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Test Condition480V, 5A, 100 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Switching Energy250μJ (on), 140μJ (off)
- Terminal PositionSINGLE
- Additional FeatureULTRA FAST SOFT RECOVERY
- Fall Time-Max (tf)210ns
- Number of Elements1
- Td (on/off) @ 25°C49ns/97ns
- Qualification StatusNot Qualified
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time28ns
- Number of Terminations2
- Transistor ApplicationMOTOR CONTROL
- Vce(on) (Max) @ Vge, Ic2.62V @ 15V, 5A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)410 ns
- Reflow Temperature-Max (s)30
- Power Dissipation-Max (Abs)38W
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max6.5V
- Peak Reflow Temperature (Cel)260
- Current - Collector (Ic) (Max)9A
- Current - Collector Pulsed (Icm)18A
- Voltage - Collector Emitter Breakdown (Max)600V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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