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IRG4RC10SDTRPBF

  • In Stock: 110456
  • Available: 110456

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.54004US $2.54
10+US $1.69336US $16.93
30+US $1.27002US $38.10
100+US $1.01602US $101.60
500+US $0.93135US $465.68
1000+US $0.84668US $846.68

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRG4RC10SDTRPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6.223mm
  • Height
    1.2446mm
  • Length
    6.7056mm
  • Weight
    350.003213mg
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • Rise Time
    32ns
  • Input Type
    Standard
  • Gate Charge
    15nC
  • Part Status
    Obsolete
  • Subcategory
    Insulated Gate BIP Transistors
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Turn On Time
    106 ns
  • JEDEC-95 Code
    TO-252AA
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Test Condition
    480V, 8A, 100 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    MATTE TIN OVER NICKEL
  • Base Part Number
    IRG4RC10SDPBF
  • Switching Energy
    310μJ (on), 3.28mJ (off)
  • Factory Lead Time
    13 Weeks
  • Power Dissipation
    38W
  • Additional Feature
    LOW CONDUCTION LOSS
  • Fall Time-Max (tf)
    1080ns
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    76ns/815ns
  • Element Configuration
    Single
  • Max Breakdown Voltage
    600V
  • Max Collector Current
    14A
  • Max Power Dissipation
    38W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    28 ns
  • Number of Terminations
    2
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    1.8V @ 15V, 8A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    1780 ns
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6V
  • Peak Reflow Temperature (Cel)
    260
  • Collector Emitter Voltage (VCEO)
    1.8V
  • Current - Collector Pulsed (Icm)
    18A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.7V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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