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IRG6B330UDPBF

  • Available: 38748

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $6.68360US $6.68
10+US $6.01524US $60.15
30+US $4.67852US $140.36
100+US $3.84307US $384.31
500+US $3.67598US $1837.99
1000+US $3.34180US $3341.80

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRG6B330UDPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    Trench
  • Packaging
    Tube
  • Published
    2010
  • Input Type
    Standard
  • Gate Charge
    85nC
  • Part Status
    Last Time Buy
  • Power - Max
    160W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    83 ns
  • JEDEC-95 Code
    TO-220AB
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-220-3
  • Test Condition
    196V, 25A, 10 Ω
  • Factory Lead Time
    16 Weeks
  • Number of Elements
    1
  • Td (on/off) @ 25°C
    47ns/176ns
  • Qualification Status
    Not Qualified
  • Element Configuration
    Single
  • Max Collector Current
    70A
  • Max Power Dissipation
    160W
  • Operating Temperature
    -40°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    60 ns
  • Number of Terminations
    3
  • Vce(on) (Max) @ Vge, Ic
    2.76V @ 15V, 120A
  • Turn Off Time-Nom (toff)
    411 ns
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    5V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Collector Emitter Voltage (VCEO)
    2.76V
  • Collector Emitter Breakdown Voltage
    330V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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