IRG7PH30K10DPBF
- Manufacturer's Part No.:IRG7PH30K10DPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 1200V 30A 180W TO247AC
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- Available: 2685
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRG7PH30K10DPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- Width5.3086mm
- Height20.7mm
- Length15.87mm
- IGBT TypeTrench
- Lead FreeLead Free
- PackagingTube
- Published2009
- Input TypeStandard
- Gate Charge45nC
- Part StatusObsolete
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time34 ns
- JEDEC-95 CodeTO-247AC
- Mounting TypeThrough Hole
- Rise Time-Max41ns
- Number of Pins3
- Package / CaseTO-247-3
- Test Condition600V, 9A, 22 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishMATTE TIN OVER NICKEL
- Switching Energy530μJ (on), 380μJ (off)
- Power Dissipation180W
- Fall Time-Max (tf)56ns
- Number of Elements1
- Turn On Delay Time23 ns
- Radiation HardeningNo
- Td (on/off) @ 25°C14ns/110ns
- Turn-Off Delay Time130 ns
- Element ConfigurationSingle
- Max Collector Current30A
- Max Power Dissipation180W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time140ns
- Number of Terminations3
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 9A
- Turn Off Time-Nom (toff)390 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max7.5V
- Peak Reflow Temperature (Cel)250
- Collector Emitter Voltage (VCEO)2.35V
- Current - Collector Pulsed (Icm)27A
- Collector Emitter Breakdown Voltage1.2kV
- Collector Emitter Saturation Voltage2.35V
- Voltage - Collector Emitter Breakdown (Max)1200V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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