IRG7PH35U-EP
- Manufacturer's Part No.:IRG7PH35U-EP
- Manufacturer:
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- Series:-
- Description:IGBT 1200V 55A TO247
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- Available: 3826
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.IRG7PH35U-EP
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- IGBT TypeTrench
- PackagingTube
- Published2010
- Input TypeStandard
- Gate Charge130nC
- Part StatusObsolete
- Power - Max210W
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time45 ns
- JEDEC-95 CodeTO-247AD
- Mounting TypeThrough Hole
- Number of Pins3
- Package / CaseTO-247-3
- Test Condition600V, 20A, 10 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishMATTE TIN OVER NICKEL
- Base Part NumberIRG7PH35
- Switching Energy1.06mJ (on), 620μJ (off)
- Fall Time-Max (tf)105ns
- Number of Elements1
- Td (on/off) @ 25°C30ns/160ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Max Collector Current55A
- Max Power Dissipation210W
- Operating Temperature-55°C~175°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations3
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 20A
- Turn Off Time-Nom (toff)400 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max6V
- Peak Reflow Temperature (Cel)250
- Collector Emitter Voltage (VCEO)2.2V
- Current - Collector Pulsed (Icm)60A
- Collector Emitter Breakdown Voltage1.2kV
- Collector Emitter Saturation Voltage1.9V
- Voltage - Collector Emitter Breakdown (Max)1200V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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