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IRG7PH35UD1PBF

  • Available: 3751

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRG7PH35UD1PBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • IGBT Type
    Trench
  • Packaging
    Tube
  • Published
    2010
  • Input Type
    Standard
  • Gate Charge
    85nC
  • Part Status
    Obsolete
  • Power - Max
    179W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-247AC
  • Mounting Type
    Through Hole
  • Surface Mount
    NO
  • Package / Case
    TO-247-3
  • Test Condition
    600V, 20A, 10 Ω, 15V
  • Case Connection
    COLLECTOR
  • Base Part Number
    IRG7PH35
  • Switching Energy
    620μJ (off)
  • Terminal Position
    SINGLE
  • Fall Time-Max (tf)
    105ns
  • Number of Elements
    1
  • Td (on/off) @ 25°C
    -/160ns
  • Qualification Status
    Not Qualified
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reach Compliance Code
    compliant
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 20A
  • Gate-Emitter Voltage-Max
    30V
  • Turn Off Time-Nom (toff)
    400 ns
  • Power Dissipation-Max (Abs)
    179W
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6V
  • Current - Collector (Ic) (Max)
    50A
  • Current - Collector Pulsed (Icm)
    150A
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-PSFM-T3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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