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IRG7PH42UD2PBF

  • Available: 2239

Reference Price(In US Dollars)

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1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRG7PH42UD2PBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    Trench
  • Packaging
    Tube
  • Published
    2009
  • Input Type
    Standard
  • Gate Charge
    234nC
  • Part Status
    Obsolete
  • Power - Max
    321W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • JEDEC-95 Code
    TO-247AC
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    600V, 30A, 10 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    MATTE TIN OVER NICKEL
  • Base Part Number
    IRG7PH42
  • Switching Energy
    1.32mJ (off)
  • Fall Time-Max (tf)
    85ns
  • Number of Elements
    1
  • Td (on/off) @ 25°C
    -/233ns
  • Qualification Status
    Not Qualified
  • Element Configuration
    Single
  • Max Collector Current
    60A
  • Max Power Dissipation
    321W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.02V @ 15V, 30A
  • Turn Off Time-Nom (toff)
    470 ns
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6V
  • Peak Reflow Temperature (Cel)
    250
  • Collector Emitter Voltage (VCEO)
    2.02V
  • Current - Collector Pulsed (Icm)
    90A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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