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IRG7PH42UPBF

  • Available: 3000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $8.05084US $8.05
10+US $7.24576US $72.46
30+US $5.63559US $169.07
100+US $4.62923US $462.92
500+US $4.42796US $2213.98
1000+US $4.02542US $4025.42

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRG7PH42UPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    5.3086mm
  • Height
    20.7mm
  • Length
    15.87mm
  • Weight
    38.000013g
  • IGBT Type
    Trench
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2005
  • Input Type
    Standard
  • Gate Charge
    157nC
  • Part Status
    Obsolete
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Rise Time-Max
    41ns
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    600V, 30A, 10 Ω, 15V
  • Switching Energy
    2.11mJ (on), 1.18mJ (off)
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    385W
  • Fall Time-Max (tf)
    86ns
  • Turn On Delay Time
    25 ns
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    25ns/229ns
  • Turn-Off Delay Time
    229 ns
  • Element Configuration
    Single
  • Max Collector Current
    90A
  • Max Power Dissipation
    385W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 30A
  • Gate-Emitter Thr Voltage-Max
    6V
  • Collector Emitter Voltage (VCEO)
    2V
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Collector Emitter Saturation Voltage
    1.7V
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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