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IRG7PH50K10DPBF

  • Available: 3121

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    IRG7PH50K10DPBF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2000
  • Input Type
    Standard
  • Gate Charge
    300nC
  • Part Status
    Obsolete
  • Power - Max
    400W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Rise Time-Max
    80ns
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    600V, 35A, 5 Ω, 15V
  • Switching Energy
    2.3mJ (on), 1.6mJ (off)
  • Fall Time-Max (tf)
    110ns
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    90ns/340ns
  • Element Configuration
    Single
  • Max Collector Current
    90A
  • Max Power Dissipation
    400W
  • Operating Temperature
    -40°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    130 ns
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 35A
  • Gate-Emitter Thr Voltage-Max
    7.5V
  • Collector Emitter Voltage (VCEO)
    2.4V
  • Current - Collector Pulsed (Icm)
    160A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Collector Emitter Saturation Voltage
    2.4V
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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